Samsung has started mass production of 256-Gbit 64-layer 3D NAND TLC

Samsung Electronics Co. Ltd. to open an official press release announced the launch of mass production of 64-layer chip flash memory V-NAND (3D NAND) capacity of 256 Gbps. It should be clarified that the limited edition 64-layer 3D NAND chips, Samsung start in the fourth quarter of last year. This allowed Samsung in January 2017 using a new memory to start the supply of advanced SSD individual clients of the company. Add 64-ply 256-Gbit chips built on the cell with the ability to record in each of their three bits of data (3D NAND TLC).

Mass serial production of 64-layer 256 GB of memory 3D NAND TLC started on the lines just started to build the company’s new plant near the city of Pyeongtaek (Pyeongtaek). The design capacity of the plant is 200 thousand. 300-mm wafers per month. At the initial stage of the plant will be able to handle 40-50 thousand every month. 300-mm wafers with flash memory 3D NAND. But even these volumes will be enough to have the second half of the year the company was able to increase the production share of the 64-layer 3D NAND chips in a stream of all of NAND-flash production to a level of 50% or even exceed it.

Chips 64-layer 256Gb V-NAND (Samsung)
64-layer chip 256 Gb V-NAND (Samsung)

On the basis of 64-layer chips it plans to produce solid-state drives for mobile devices, personal computers and servers. Perhaps, the Samsung initiative will affect this negative trend of the last quarters, the growth of wholesale flash memory prices. Subsequently, a 64-layer 3D NAND chips will be used for the production of flash memory cards and embedded memory, including UFS drives.

Chips 256 64-ply V-NAND Gbps and 1-TB M.2 SSD (Samsung)
64-ply chip 256 Gbit V-NAND-TB and 1 M.2 SSD (Samsung)

According to Samsung, the data transfer rate on one line 64-layer 3D NAND memory reaches 1 Gbit / s. Also, a new memory promises the fastest in the industry page-record (tPROG) at 500 microseconds, which is four times smaller than typical for planar flash memory of 10-nm-class, and 1.5 times faster than in the case of 48-layer 256 -Gbit 3D NAND TLC Samsung. Finally, at the same recording density energy efficiency of the memory layer 64 is 30% higher than the storage layer 48 (due to reduction of the supply voltage from 3.3 V to 2.5 V), and by 20% enhanced reliability of operation.


In conclusion, we note that in the second half of 2017 competitors Samsung – Toshiba company, Western Digital and SK Hynix – plan to begin production of more advanced memory 3D NAND. So, Toshiba and Western Digital have developed and started mass production of 512-Gbit 64-layer memory 3D NAND, while the company SK Hynix will begin mass production of 256-Gbit 72-layer 3D NAND. In both cases, the cost of the recording density and promise to be better than the current generation of Samsung memory. It will not go unanswered. The race for the number of layers and the recording density will continue. Ahead 100-ply non-volatile memory chips, and 1-Tbit capacity.



Always on the move... Love to blog, write about smartphones, technology and telecoms. I also like to snowboard, when I have the time :p I'll be around for a while so, be prepared.

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